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Deanship of Graduate Studies
Document Details
Document Type
:
Thesis
Document Title
:
Study of some Physical Properties of Lead Selenide (PbSe) Thin Films
دراسة بعض الخصائص الفيزيائية للأغشية الرقيقة من مركب سيلينيد الرصاص
Subject
:
College of Science for Girls
Document Language
:
Arabic
Abstract
:
The object of this thesis was devoted to study the crystal structural and transport electrical properties of Lead Selenide thin films. For this purpose, high purity PbSe is thermally evaporated from molybdenum boat in vacuum of 10-5 Torr, on to glass substrates for structural and electrical transport measurements. The X-ray diffraction patterns of powder PbSe showed polycrystalline structural of Cubic phase with lattice constants of: a = 6.1223 Å The X- ray diffraction patterns of PbSe thin films showed the crystal structural of Cubic system and they have preferred orientation. The annealing effect is increase the degree of crystallininty. The transport electrical properties such as electrical resistivity was studied for film of different thickness as deposited. It was found that for PbSe films the electrical conductivity is strongly affected by the sample temperature, the heat treatment and film thickness. PbSe films showed semi conducting behaviour. The dependence of electrical resistivity on film thickness showed that the electrical resistivity decrease as the film thickness increase. The activation energy ΔE1, ΔE2 of the free charge for PbSe samples was calculated using the electrical resistivity data at different temperature for different thickness was found that the activation energy decrease as the film thickness increase. Both the current-voltage characteristics and capacitance - voltage characteristics of n- PbSe / p- Si and n- PbSe / n- Si heterojunctions were studied through out this study some of the following parameters were determined in each heterojunctions: 1. The Rectification Ratio RR. 2. Series Resistance Rs and Short Circuit Resistance Rsh 3. Reverse Saturation Current Irs. 4. Diode Quality Factor n`. 5. The Built in Voltage Vb 6. The Width of the Depletion Region Wmax. 7. Barrier Height φb. Finally, the current-voltage characteristics and capacitance - voltage characteristics of n- PbSe / p- Si and n- PbSe / n- Si heterojunctions were studied.
Supervisor
:
Dr.Farag Saeed Al -Hazme
Thesis Type
:
Master Thesis
Publishing Year
:
1430 AH
2009 AD
Added Date
:
Sunday, April 11, 2010
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
مها حسن العطاس
Alattas, Maha Hassan
Researcher
Master
Files
File Name
Type
Description
26381.pdf
pdf
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