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Deanship of Graduate Studies
Document Details
Document Type
:
Thesis
Document Title
:
FABRICATION AND CHARACTERIZATION OF METAL CONTACTS TO SiC
تصنيع و دراسة خصائص اتصال معدن بكربيد السيليكون
Subject
:
physics department
Document Language
:
Arabic
Abstract
:
Schottky diodes were fabricated on n-type 4H-SiC with Nickel ohmic contacts and Nickel Schottky contacts. An improved and revised fabrication process was developed during this research project. The Schottky diodes were electrically characterized using I-V and C-V measurements to extract electrical parameters which include Schottky barrier height, ideality factor, the diode series resistance, and doping density. Ni/4H-SiC was annealed at 700ºC to create the ohmic contact from Schottky. Schottky barrier height was raised and the ideality factor was reduced. Significant improvement was observed in the ideality factor of Ni/4H-SiC diodes. XRD was performed on Ni/4H-SiC samples to investigate the effects of annealing at the Nickel-SiC interface. Analysis of the XRD results showed Nickel-Silicon bonding at the interface. Electrical characterization of Ni/4H-SiC showed that the devices had a low ideality factor and represented some of the best results obtained in our research lab. The thesis establishes the effect of annealing on the transformation of Ni/4H-SiC to ohmic. The barrier height discrepancy were analyze using thermionic emission theory, Gaussian distribution model, flat-band temperature depend coefficient. Also, the ideality factor was analyzed based on To-effect and thermionic field emission theory. Richardson constant obtained using these models were in close agreement with the theoretical value.
Supervisor
:
Prof. Fahad M Almarzouki
Thesis Type
:
Master Thesis
Publishing Year
:
1434 AH
2013 AD
Co-Supervisor
:
Prof. Azhar A Ansari
Added Date
:
Monday, March 11, 2013
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
محمد عبدالله الغامدي
Alghamdi, Mohammd Abdullah
Researcher
Master
Files
File Name
Type
Description
35191.pdf
pdf
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